Bibliografische Daten
ISBN/EAN: 9789814451208
Sprache: Englisch
Umfang: ix, 103 S., 73 s/w Illustr., 2 farbige Illustr., 1
Einband: kartoniertes Buch
Beschreibung
InhaltsangabeCHAPTER 1 Introduction1.1 Overview of Electromigration1.2 Modeling of Electromigration1.3 Organization of the Book1.4 SummaryCHAPTER 2 3D Circuit Model Construction and Simulation 2.1 Introduction2.2 Layout Extraction and 3D Model Construction2.3 Transient Electro-thermo-structural Simulations and Atomic Flux Divergence (AFD) Computation2.4 Simulation Results and Discussions2.5 Effects of Barrier Thickness and Low- Dielectric on Circuit EM Reliability2.6 SummaryCHAPTER 3 Comparison of EM Performances in Circuit and Test Structures 3.1 Introduction3.2 Model Construction and Simulation Setup3.3 Distributions of Atomic Flux Divergences under Different Operation Conditions3.4 Effects of Interconnect Structures on Circuit EM Reliability3.5 Effects of Transistor Finger Number on Circuit EM Reliability3.6 SummaryCHAPTER 4 Interconnect EM Reliability Modeling at Circuit Layout Level 4.1 Introduction4.2 Model Construction and Simulation Setup4.3 Distributions of Atomic Flux Divergences4.4 Effects of Layout and Process parameters on Circuit EM Reliability. 4.5 SummaryCHAPTER 5 Concluding Remarks 5.1 Conclusions5.2 Recommenations for Future Work
Produktsicherheitsverordnung
Hersteller:
Springer Verlag GmbH
juergen.hartmann@springer.com
Tiergartenstr. 17
DE 69121 Heidelberg
Autorenportrait
InhaltsangabeCHAPTER 1 Introduction1.1 Overview of Electromigration1.2 Modeling of Electromigration1.3 Organization of the Book1.4 SummaryCHAPTER 2 3D Circuit Model Construction and Simulation 2.1 Introduction2.2 Layout Extraction and 3D Model Construction2.3 Transient Electro-thermo-structural Simulations and Atomic Flux Divergence (AFD) Computation2.4 Simulation Results and Discussions2.5 Effects of Barrier Thickness and Low- Dielectric on Circuit EM Reliability2.6 SummaryCHAPTER 3 Comparison of EM Performances in Circuit and Test Structures 3.1 Introduction3.2 Model Construction and Simulation Setup3.3 Distributions of Atomic Flux Divergences under Different Operation Conditions3.4 Effects of Interconnect Structures on Circuit EM Reliability3.5 Effects of Transistor Finger Number on Circuit EM Reliability3.6 SummaryCHAPTER 4 Interconnect EM Reliability Modeling at Circuit Layout Level 4.1 Introduction4.2 Model Construction and Simulation Setup4.3 Distributions of Atomic Flux Divergences4.4 Effects of Layout and Process parameters on Circuit EM Reliability. 4.5 SummaryCHAPTER 5 Concluding Remarks 5.1 Conclusions5.2 Recommenations for Future Work