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Positron Annihilation in Semiconductors

Defect Studies, Springer Series in Solid-State Sciences 127

Erschienen am 21.01.1999
213,99 €
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Bibliografische Daten
ISBN/EAN: 9783540643715
Sprache: Englisch
Umfang: xv, 383 S., 121 s/w Illustr., 383 p. 121 illus.
Einband: gebundenes Buch

Beschreibung

This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.

Produktsicherheitsverordnung

Hersteller:
Springer Verlag GmbH
juergen.hartmann@springer.com
Tiergartenstr. 17
DE 69121 Heidelberg

Inhalt

Introduction.- Experimental techniques.- Comparision of positron annihilation to other relevant techniques.- Basics of positron annihilation in semiconductors.- Native defects.- Irradiation induced defects.- Defects after plastic deformation.- Defects in layered structures and near-surface defect profiling.- Defect engineering.

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